Dynamic tensor properties of silicon with deep impurity levels

Odiljon Mamatkarimov; Ulugbek Tuychiev; Ikromjon  Tursunov; Rustamjon Khamidov

doi:10.14331/ijfps.2011.330010

Dynamic tensor properties of silicon with deep impurity levels

Authors

Odiljon Mamatkarimov National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan Author
Ulugbek Tuychiev National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan Author
Ikromjon Tursunov National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan Author
Rustamjon Khamidov National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan Author

DOI:

https://doi.org/10.14331/ijfps.2011.330010

Keywords:

Simple Properties, Tensor

Abstract

The dynamical tensoproperties of simples Si <Ni>, Si <Gd>, Si <Au> and Si <Mn> at temperatures Т=293К and Т=273К are investigated. The strongly increasing of dynamical tensosensitivity these specified simples at speed of change of pressure P\t >108 Pa/s in comparison with their statistical tensosensitivities is shown.

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References

Abduraimov A., Zaynabidinov S.Z., Mamatkarimov O.O.,

Himmatkulov O., 1993.Uzbek Journal of Physics. No 4, 96.

Abduraimov A, Zaynabiddinov S.Z., Tursunov I.G.,

Himmatkulov O., 1993. FTS. V.27. Edition 3, 516.

Kireev P.S., 1969. Physics of Semiconductors. –M.: Vysshaya

Shkola, 592.

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Published

2011-06-30

Issue

Vol. 1 No. 2 (2011): IJFPS

Section

Articles

License

This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

How to Cite

Dynamic tensor properties of silicon with deep impurity levels (O. Mamatkarimov, U. Tuychiev, I. Tursunov, & R. Khamidov, Trans.). (2011). International Journal of Fundamental Physical Sciences, 1(2), 39-41. https://doi.org/10.14331/ijfps.2011.330010