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  <timestamp>20250603233145736</timestamp>
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    <depositor_name>funda:funda</depositor_name>
    <email_address>fundamentalJournals@gmail.com</email_address>
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  <journal>
    <journal_metadata>
  <full_title>International Journal of Fundamental Physical Sciences</full_title>
  <abbrev_title>IJFPS</abbrev_title>
  <issn media_type='electronic'>22318186</issn>
</journal_metadata>
<journal_issue>
  <publication_date media_type='online'>
    <month>06</month>
    <year>2011</year>
  </publication_date>
  <journal_volume>
    <volume>1</volume>
  </journal_volume>
  <issue>2</issue>
</journal_issue><!-- ============== -->
<journal_article publication_type='full_text'>
  <titles>
  <title>Dynamic tensor properties of silicon with deep impurity levels</title>
  </titles>
  <contributors>
    <organization sequence='first' contributor_role='author'>National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan</organization>
    <person_name sequence='first' contributor_role='author'>
     <given_name>Odiljon</given_name>
      <surname>Mamatkarimov</surname>
    </person_name>
    <person_name sequence='additional' contributor_role='author'>
      <given_name>Ulugbek</given_name>
      <surname>Tuychiev</surname>
    </person_name>
   <organization sequence='additional' contributor_role='author'>National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan</organization>
    <person_name sequence='additional' contributor_role='author'>
      <given_name>Ikromjon</given_name>
      <surname>Tursunov</surname>
    </person_name>
   <organization sequence='additional' contributor_role='author'>National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan</organization>
    <person_name sequence='additional' contributor_role='author'>
      <given_name>Rustamjon</given_name>
      <surname>Khamidov</surname>
    </person_name>
   <organization sequence='additional' contributor_role='author'>National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan</organization>
  </contributors>
  <jats:abstract xml:lang='en'>
    <jats:p>The dynamical tensoproperties of simples Si &lt;Ni&gt;, Si &lt;Gd&gt;, Si &lt;Au&gt; and Si &lt;Mn&gt; at temperatures Т=293К and Т=273К are investigated. The strongly increasing of dynamical tensosensitivity these specified simples at speed of change of pressure P\t &gt;108 Pa/s in comparison with their statistical tensosensitivities is shown.</jats:p>
  </jats:abstract>
<publication_date media_type='online'>
    <month>06</month>
    <year>2011</year>
  </publication_date>  <pages>
  <first_page>39</first_page>
  <last_page>41</last_page>
  </pages>
  <doi_data>
  <doi>10.14331/ijfps.2011.330010</doi>
  <resource>https://www.fundamentaljournals.com/index.php/ijfps/article/view/11</resource>
  </doi_data>
</journal_article>
  </journal>
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