Y.K. Sharma, Yi Xu, M. R. Jennings, C Fisher, P. Mawby, L.C. Feldman, and J.R. Williams, trans. “Improved Stability of 4H Sic-MOS Devices After Phosphorous Passivation With Etching Process”. International Journal of Fundamental Physical Sciences 4, no. 2 (June 30, 2014): 37–42. Accessed October 18, 2026. https://fundamentaljournals.com/index.php/ijfps/article/view/65.