Authors: C. A. Fisher, M. R. Jennings, Y. K. Sharma, A. Sanchez-Fuentes, D. Walker, P. M. Gammon, A. Pérez-Tomás, S. M. Thomas, S. E. Burrows, P. A. Mawby
Affiliations: School of Engineering, University of Warwick, Coventry, CV4 7AL, UK, Department of Physics, University of Warwick, Coventry, CV4 7AL, UK, Institut Català De Nanociència i Nanotecnologia, 08193, Bellaterra, Spain
Emails: [email protected]
Journal: International Journal of Fundamental Physical Sciences (IJFPS)
Volume: 4, Issue: 3, Pages: 95-100, Date: September, 2014
ISSN: 2231-8186
DOI: https://doi.org/10.14331/ijfps.2014.330071
This paper investigates Ti/Al-based ohmic contacts to p-type 4H-SiC. The lowest specific contact resistance of 3.7×10⁻⁵ Ω-cm² was achieved using Ti/Al/NiV after annealing at 1000°C. TEM analysis revealed an epitaxial Ti layer on 4H-SiC, and XRD confirmed the formation of Ti3SiC2, correlating with lower Schottky barrier height. The results indicate that Ti3SiC2 formation, especially in Ti/Al/NiV structures, significantly reduces contact resistance due to improved current conduction across the interface.
4H-SiC, ohmic contact, p-type, Ti3SiC2