Authors: Najwa Rosli, Keewah Chan, Saadah A. Rahman, Ilyani Putri Jamal, Zarina Aspanut
Affiliations: Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia
Emails: [email protected]
Journal: International Journal of Fundamental Physical Sciences (IJFPS)
Volume: 1, Issue: 4, Pages: 74-77, Date: December, 2011
ISSN: 2231-8186
DOI: https://doi.org/10.14331/ijfps.2011.330018
In this work, layered silicon suboxide/gold/silicon suboxide (SiOx/Au/SiOx) films were prepared using hot-wire plasma enhanced chemical vapor deposition (HW-PECVD). The films were subjected to rapid thermal annealing (RTA) at 800°C for different durations. The effects of RTA on film morphology, structure, and optical properties were studied. The Au nanoparticle crystallinity improved with longer annealing, showing increased diffraction intensity. Surface plasmon resonance (SPR) peaks emerged in the visible region for films annealed longer, with energy gaps in the 1.8–2.05 eV range. FESEM and Auger analysis confirmed structural and elemental changes.
Silicon, Plasma Enhanced Chemical Vapour Deposition (PECVD), FE-SEM, XRD