Dynamic tensor properties of silicon with deep impurity levels

Authors: Odiljon Mamatkarimov, Ulugbek Tuychiev, Ikromjon Tursunov, Rustamjon Khamidov

Affiliations: National University of Uzbekistan, after M. Ulugbek, 700098, Tashkent, Uzbekistan

Emails: [email protected]

Journal: International Journal of Fundamental Physical Sciences (IJFPS)

Volume: 1, Issue: 1, Pages: 39-41, Date: June, 2011

ISSN: 2231-8186

DOI: https://doi.org/10.14331/ijfps.2011.330010

Abstract

The dynamical tensoproperties of samples Si, Si, Si and Si at temperatures T=293K and T=273K are investigated. A significant increase in dynamic tensosensitivity at pressure change rates >108 Pa/s compared to static sensitivities was observed.

Keywords

Silicon, deep impurity levels, dynamic tensor properties, tensosensitivity

License: https://creativecommons.org/licenses/by/4.0/